Periodic Inversion Domains on Step-Flow Surfaces of N-Polar GaN Grown on m-Plane Offcut 4H-SiC(0001̅)
Understanding the atomic-scale interfaces in advanced semiconductor heterostructures is essential for controlling defects, optimizing material properties, and ensuring device reliability. In this work, we present a comprehensive study of the atomic structure at Al(Ga)N interfaces in N-polar GaN high-electron-mobility transistor structures (HEMTs) via aberration-corrected annular dark field scannin
