Determination of diffusion lengths in nanowires using cathodoluminescence
We used cathodoluminescence imaging to determine diffusion lengths in III-V semiconductor nanowires, grown by metal-organic chemical vapor deposition seeded by gold nanoparticles. Intensity profiles were recorded either from the interface between the substrate and homogeneous nanowires, or from segments in nanowires containing axial heterostructures to determine the diffusion length. We determined