Impact of source doping on the performance of vertical InAs/InGaAsSb/GaSb nanowire Tunnel Field-Effect Transistors
In this paper, we analyze experimental data from state-of-the-art vertical InAs/InGaAsSb/GaSb nanowire Tunnel Field-Effect Transistors to study influence of the source doping on their performance. Overall, the doping level impacts both off-state and on-state performance of these devices. Separation of the doping from the heterostructure improved the subthreshod swing of the devices. Best devices r
