Modeling the formation of InP/GaxIn1-xP axial nanowire heterostructures
A model is developed to depict the formation of InP/GaxIn1-xP axial heterostructures in self-catalyzed GaxIn1-xP nanowires. The composition profiles of the InP/GaxIn1-xP axial heterostructure are calculated taking into account elastic stresses. It is shown that the InP/GaxIn1-xP axial heterojunction width at the growth temperature of 450°C is larger than 12 monolayers for nanowires with the radius