UHV-CVD growth of Ge/Si nanostructures
This thesis is based on the results concerning the epitaxial growth and characterization of silicon (Si) and germanium (Ge) nanostructures. The growth technique was the Ultra High Vacuum Chemical Vapor Deposition (UHV-CVD) that works in relatively low temperatures and low growth pressures. The UHV-CVD chamber was also used for the reduction experiments. The work presented here involves three diff