Zeeman Interaction in Low-Dimensional III-V Semiconductor Structures
The Zeeman interaction in low-dimensional III-V semiconductor nanostructures is studied. The effective g-value of bulk InGaAs is measured by two different spin resonance techniques. Experimental conditions were found to control the Overhauser effect, thus enabling a highly accurate determination of the g-value, g* = -4.070 ± 0.005, being a prerequisite for theoretical modeling of low-dimensional
