1/f Noise Sources in Dual-Gated Indium Arsenide Nanowire Transistors
1/f noise is studied in dual-gated InAs nanowire transistors consisting of an omega top gate with high-k atomic layer deposited dielectric and silicon dioxide to substrate back gate. Noise spectra at varying gate bias combinations are compared from devices with differing top-gate lengths to separate the noise contributions of the top-gated channel from the ungated access portion, including the met