A 4.3-mW mm-Wave Divide-by-Two Circuit with 30% Locking Range in 28-nm FD-SOI CMOS
A mm-wave divide-by-two circuit with high injection efficiency, implemented in a 28-nm fully-depleted silicon-on-insulator (FD-SOI) CMOS process is demonstrated stand-alone, as well as using an on-chip voltage controlled oscillator (VCO) as the input signal source. Measurements show that the divider has a 30.1 % tuning range centered at an output frequency of 24 GHz, at an input signal power of -1A mm-wave divide-by-two circuit with high injection efficiency, implemented in a 28-nm fully-depleted silicon-on-insulator (FD-SOI) CMOS process is demonstrated stand-alone, as well as using an on-chip voltage controlled oscillator (VCO) as the input signal source. Measurements show that the divider has a 30.1 % tuning range centered at an output frequency of 24 GHz, at an input signal power of -1