Comparison of chemical, electronic, and optical properties of Mg-doped AlGaN
Hydrogen, carbon, and oxygen are common unintentional impurities of Al(x)Ga(1−x)N crystals. This impurity structure and its interplay with Mg impurities in Al(x)Ga(1−x)N semiconductors are relevant to develop the p-type nitride crystals for various devices (e.g, LEDs, transistors, gas sensors) but are still unclear. Here we have investigated Mg-doped Al0.5Ga0.5N before and after postgrowth anneali