High-quality N-polar GaN optimization by multi-step temperature growth process
We report growth optimization of Nitrogen (N)-polar GaN epitaxial layers by hot-wall metal–organic vapor phase epitaxy on 4H-SiC (000) with a misorientation angle of 4° towards the [110] direction. We find that when using a 2-step temperature process for the N-polar GaN growth, step bunching is persistent for a wide range of growth rates (7 nm/min to 49 nm/min) and V/III ratios (251 to 3774). This
