Voids and Mn-rich inclusions in a (Ga,Mn)As ferromagnetic semiconductor investigated by transmission electron microscopy
Voids adjacent to cubic (ZnS-type) and hexagonal (NiAs-type) Mn-rich nanocrystals are characterized using aberration-corrected transmission electron microscopy in an annealed Ga(0.995)Mn(0.005)As magnetic semiconductor specimen grown by molecular beam epitaxy. Nanobeam electron diffraction measurements suggest that the nanocrystals exhibit deviations in lattice parameter as compared to bulk MnAs.