Precise in situ thickness analysis of epitaxial graphene layers on SiC(0001) using low-energy electron diffraction and angle resolved ultraviolet photoelectron spectroscopy
We demonstrate an easy and practical method for the thickness analysis of epitaxial graphene on SiC(0001) that can be applied continuously during the preparation procedure. Fingerprints in the spot intensity spectra in low energy electron diffraction (LEED) allow for the exact determination of the number of layers for the first three graphene layers. The LEED data have been correlated with the ele