An ultra low voltage, low power, fully integrated VCO for GPS in 90 nm RF-CMOS
A fully integrated 0.6 V VCO for the GPS L1 band is realized in a 90 nm RF-CMOS process. The purpose of the design is to demonstrate how suitable deep submicron CMOS transistors are for ultra low voltage, low power oscillator design. The VCO operates at 6.3 GHz and a divide-by-four circuit buffer provide the wanted 1575.42 MHz signal. Measured phase noise is for a 0.6 V supply voltage and bias cur
