Strained Inx Ga(1-x )As/InP near surface quantum wells and MOSFETs
We present electronic band structure properties of strained InxGa(1-x)As/InP heterostructure near surface quantum wells oriented in the (100) crystallographic direction using eight-band k · p theory, which are further parameterized by an energy level, effective mass, and nonparabolicity factor. The electronic band structure parameters are studied for the well composition of 0.2 ≤ x ≤ 1 and thickne