Epitaxial Growth and Design of Nanowires and Complex Nanostructures
Popular Abstract in Swedish Denna avhandling behandlar epitaxiell växt av nanotrådar i III-V halvledarmaterial, i vilken guldpartiklar använts som frö, samt design av tredimensionella mer avancerade förgrenade strukturer baserade på dessa trådar. Växten utfördes via så kallad ?MetallOrganic Vapour Phase Epitaxy? (MOVPE), i vilken prekursormolekylerna till halvledarmaterialens komponenter tillförs This thesis describes the epitaxial growth of III-V semiconductor nanowires using Au seed particles, and the design of more complex three-dimensional branched structures from these wires. Growth was performed by metallorganic vapour phase epitaxy, in which precursor molecules for the semiconductor material components are introduced in a low-pressure vapour. Nanowires grow epitaxially (with control
