High Transconductance, f(t) and f(max) in In0.63Ga0.37As FinFETs Using A Novel Fin Formation Technique
We report on In0.63Ga0.37As FinFETs utilizing nanowires grown by selective-area growth as channel. These nanowires are defined by crystallographic planes rather than pattern transfer using etching. The fabricated devices exhibit maximum transconductance g(m,max) = 2.05 mS/um at V-ds = 0.5 V, as well as record-high extrapolated f(t) = 300 GHz and f(max) = 342 GHz, on the non-planar III-V MOSFET pla