Towards Hot-Carrier Photovoltaics in Nanowires with Epitaxially Defined Potential Barriers
In this work, we present the design, fabrication, and characterization of InAs-based nanowire heterostructures with epitaxially defined InP and GaAs potential barrier segments, aimed at understanding and demonstrating the functionality of a double-barrier nanowire heterostructure as a hot-carrier photovoltaic, in which InP and GaAs barriers encapsulate an InAs absorber region, where hot carriers a
