Capacitance Scaling in In0.71Ga0.29As/InP MOSFETs with Self-Aligned a:Si Spacers
In0.71Ga0.29As/InP (12/2 nm) quantum well MOSFETs using sacrificial amorphous silicon (a:Si) spacers to achieve low parasitic capacitance are fabricated. Radio frequency characterization of 73 devices is used to study the intrinsic and extrinsic capacitances. The total gate intrinsic parasitic capacitance of 0.55 fF/μm is achieved with an intrinsic gate capacitance of 0.39 μF/cm2. The various para