Using gallium nitride nanowires as STM probes
Gallium nitride (GaN) nanowires grown using catalyst-free metal organic vapor phase epitaxy were used as scanning tunneling microscope (STM) probes. The probes were prepared by placing a GaN nanowire on a tungsten STM probe using a nanomanipulator in a scanning electron microscope (SEM) and welding them together using an electron beam induced platinum deposition. STM imaging was performed on indiuA microscopy field known as Scanning Probe Microscopy (SPM), uses various methods to get a picture of a sample surface down to such a small scale that individual atoms can be observed. One particular method to perform such microscopy uses the phenomena of quantum tunneling rather than using visible light. This method is called Scanning Tunneling Microscopy (STM) and the way it works is extremely d
