Dynamics of Polarization Switching in Mixed Phase Ferroelectric-Antiferroelectric HZO Thin Films
The polarization switching dynamics for Hf 1-x Zr x O 2 (HZO) integrated on InAs is studied as a function of pulse width and amplitude. Due to a mixed ferroelectric/antiferroelectric phase at x=0.8, a more gradual total polarization update is shown compared to a fully ferroelectric Hf 0.5 Zr 0.5 O 2 stack. A lowered operating voltage is achieved in Hf 0.2 Zr 0.8 O 2 by activating an inner ferroele
