Suspended InAsnanowire gate-all-around field-effect transistors
Gate-all-around field-effect transistors are realized with thin, single-crystalline, pure-phase InAs nanowires grown by molecular beam epitaxy. At room temperature, the transistors show a desired high on-state current I-on of similar to 10 mu A arid an on-off current ratio I-on/I-off of as high as 10(6) at sourcedrain bias voltage of 50 mV and gate length of 1 mu m with a gate underlap spacing of