Liu Laser Combined Scanning Gate Microscopy On InAs NW Device With An InP Quantum Barrier
PowerPoint Presentation Hot Carrier Extraction in InAs/InP Nanowires Studied by Laser Combined Scanning Gate Microscopy I. Introduction II. Experimental setup III. Theoretical IV. Results V. Conclusion yen-po.liu@sljus.lu.se Laser light: variable wavelength laser with 500nm beam spot size in 600- 900 nm for hot carrier excitation. AFM tip: topography and mobile gate Electrical measurement: source-
