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The modification of the electronic properties of CeO2 thin films through Cu doping is a promising approach to enhancing their performance in photoinduced water splitting (WS). In this study, undoped and Cu-doped CeO2 films of 5 nm thickness with 5 and 11% Cu atomic concentrations were characterized under ambient pressure conditions by near-edge X-ray absorption fine structure (NEXAFS) to provide i
