Serendipitous noise reduction in inductively degenerated CMOS RF LNAs
The design of radio-frequency inductively-degenerated CMOS low-noise-amplifiers does not follow the guidelines for minimum noise figure. Nonetheless, state-of-the-art implementations achieve noise figure values very close to the theoretical minimum. In this brief contribution, we point out that this is due to the effect of the parasitic overlap capacitances in the MOS device acting as transconduct