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We have investigated the effects of strong confinement in wurtzite InAs0.85P0.15 quantum dots embedded in wurtzite InP nanowires using microphotoluminescence spectroscopy. Strain-dependent k . p calculations were used to model the quantum dots, and it was found that the electron effective mass was increased by a factor of 2 and the band gap was increased by 190 meV compared to equivalent quantum d
