Electronic properties and structure of a complex incorporating a self-interstitial and two oxygen atoms in silicon
The electronic properties and structure of a complex incorporating a self-interstitial (i) and two oxygen atoms are presented by a combination of deep level transient spectroscopy (DLTS), infrared absorption spectroscopy and ab-initio modeling studies. It is argued that the IO2 complex in Si can exist in four charge states (IO2-, IO20, IO2+, and IO2++). The first and the second donor levels of the