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Diameter-dependent growth rate of InAs nanowires

We have grown Au seeded InAs nanowires using chemical beam epitaxy and report on the growth rate dependence on nanowire diameter. We find a maximum of the growth rate at a nanowire diameter of 25 nm, below which the growth rate decreases due to the Gibbs-Thomson effect. Above the maximum, the growth rate decreases with increasing diameter due to the effect of material diffusion to the growth point