Interplay between Growth Mechanism, Materials Chemistry, and Band Gap Characteristics in Sputtered Thin Films of Chalcogenide Perovskite BaZrS3
The prototypical chalcogenide perovskite BaZrS3, characterized by its direct band gap, exceptionally strong light-harvesting ability, and good carrier transport properties, provides fundamental prerequisites for a promising photovoltaic material. This inspired the synthesis of BaZrS3 in the form of thin films, using sputtering and rapid thermal processing, aimed at device fabrication for future op
