Temperature dependent self-compensation in Al- and Ga-doped Mg 0.05 Zn 0.95 O thin films grown by pulsed laser deposition
We studied the doping efficiency of Al and Ga dopants in (Mg,Zn)O alloys as a function of the growth temperature and post growth annealing times. High-temperature growth results in the highest structural quality and highest electron mobility; the doping efficiency is limited by the dopant's solubility. It was investigated in detail that a low growth temperature is needed to achieve free carrier de