Vertical III-V Nanowire Tunnel Field-Effect Transistor
In this thesis fabrication and optimization of vertical III-V Tunneling Field-Effect transistors was explored. Usage of vertical nanowires, allows for combination of materials with large lattice mismatch in the same nanowire structure. TFETs in this thesis were fabricated using vertical InAs/GaSb or InAs/InGaAsSb/GaSb nanowires of high material quality. Usage of these material systems allowed for