A high-resolution core-level photoemission study of the Au/4H-SiC(0001)-(root 3 x root 3) interface
We present a systematic study of different reconstructions obtained after deposition of Au on the (root 3 x root 3)- R30 degrees- 4H- SiC( 0001) surface. For 1-2 monolayers ( ML) Au and annealing temperature T-anneal similar to 675 degrees C, a 3 x 3 reconstruction was observed. For 4 ML Au and T-anneal similar to 650 degrees C, a ( 2 root 3 x 2 root 3)- R30 degrees. reconstruction appeared, while