Sökresultat

Överlevare som inte orkade vara överlevande

En höst för matriarker

Recension av Martin Gelin, Den längsta kampen. Hillary Clintons väg till makten (2016) och Stefan Kornelius, Angela Merkel (2016)

Omvälvningar i synen på den ryska revolutionen

På spaning efter historiens hemvist

Musiker som gick i takt

Recension av: Hitlers lojala musiker : hur musiken blev ett vapen i Tredje rikets propaganda, av Anders Carlberg

Special Issue on Countering Influence Operations

Can there be a deterrence strategy for influence operations?

How Do You Define a Problem Like Influence?

A Swedish Perspective on Foreign Election Interference

Information Influence in Western Democracies : A model of systemic vulnerabilities

Fact-checking and debunking : a best practice guide to dealing with disinformation

What is so Foreign about Foreign Influence Operations?

The EU’s Role in Fighting Disinformation: Taking Back the Initiative

The EU’s Role in Fighting Disinformation: An EU disinformation framework

The EU’s Role in Fighting Disinformation: Policy interventions for the 2020s

The EU Code of Practice on Disinformation: Briefing Note for the New European Commission

RESIST Counter-Disinformation Toolkit

A Chinese spy manual (from the Qing dynasty)

The challenge of conflicting rationalities about urban development – Experiences from Mistra Urban Futures’ transdisciplinary urban research

This paper reflects on ten years of transdisciplinary urban research by Mistra Urban Futures, a global centre focusing on the co-production of knowledge for more just and sustainable cities across the Global South and Global North. The paper focuses on one of the key challenges that Mistra Urban Futures has faced in its work: in addition to the competing interests and agendas of participants in co

Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO₂ RRAM via TiN bottom electrode and interface engineering

Resistive random access memory (RRAM) technologies based on non-volatile resistive filament redox switching oxides have the potential of drastically improving the performance of future mass-storage solutions. However, the physico-chemical properties of the TiN bottom metal electrode (BME) can significantly alter the resistive switching (RS) behavior of the oxygen-vacancy RRAM devices, yet the corr