No title
The band offset between wurtzite (wz) and zinc-blende (zb) GaAs is an important fundamental parameter in polytype heterostructure engineering. Since the interface has a type-II band alignment, it is reasonably straightforward to measure the band offset using photoluminescence (PL) e.g. on nanowires containing heterostructures between wz and zb GaAs. It has, however, been found that the transition
