Detection of Very Fast Interface Traps at 4H-SiC/AlN and 4H-SiC/Al2O3 Interfaces
Modest channel carrier mobility in SiC-MOSFETs with NO annealed gate oxides has been the main factor hampering development of low power devices (300 – 650 V). A very fast interface trap, noted as NI, has been suggested to be the main culprit for poor inversion channel carrier mobility. The origin of the NI trap is unknown, but it is likely a property of the SiO2 and it is enhanced during post nitr