A 24GHz, 18dBm, Broadband, Three Stacked Power Amplifier in 28nm FDSOI
A three stacked power amplifier implemented in 28nm fully depleted silicon-on- insulator complementary metal oxide semi-conductor technology (FDSOI CMOS) is presented. It has a differential architecture with on-chip input and output transformer baluns. The PA achieves a saturated output power level of 17.9dBm with a peak power added efficiency of 7% and an output referred gain compression point ofA three stacked power amplifier implemented in 28nm fully depleted silicon-on-insulator complementary metal oxide semi-conductor technology (FDSOI CMOS) is presented. It has a differential architecture with on-chip input and output transformer baluns. The PA achieves a saturated output power level of 17.9dBm with a peak power added efficiency of 7% and an output referred gain compression point of
