Confinement properties of a Ga0.25In0.75As/InP quantum point contact
We study the electrostatic confinement properties of a ballistic GaInAs nanostructure, a system with a high potential for quantum applications due to its small effective mass and persistence of quantum effects to higher temperatures. By measuring the magnetic depopulation of one-dimensional subbands in an etched quantum point contact, we demonstrate that the slope of the confinement at the Fermi l
