MOVPE Growth and Characterization of Low-Dimensional III-V Semiconductor Structures
Metalorganic vapour phase epitaxy is used for growth of low-dimensional III-V semiconductor structures. The roughness of heterointerfaces in GaAs/GaInP quantum well structures is studied by photoluminescence emission from extremely narrow quantum wells. Results obtained for GaAs/GaInP quantum wells are compared to the more thoroughly investigated GaInAs/InP material combination. The potential of u