Benter 20210914 NanoLund poster SandraBenter Optimized
e- e- e- e- hv The incorporation of Bi atoms into III-V semiconductors is of large interest due to the potential formation of topological insulator states (1), band gap tuning (2) and increased spin-orbit coupling (3). Common techniques focus on bulk growth of Bi-III-V compounds imposing a limitation on the available crystal structure. Our approach enables the homogenous incorporation of single Bi
https://www.nano.lu.se/sites/nano.lu.se/files/2021-10/Benter_20210914_NanoLund_poster_SandraBenter_Optimized.pdf - 2026-05-19
