FIB method of sectioning of III–V core-multi-shell nanowires for analysis of core/sell interfaces by high resolution TEM
The core-multishell wurtzite structure (In,Ga)As–(Ga,Al)As–(Ga,Mn)As semiconductor nanowires have been successfully grown on GaAs(111)B substrates using MBE technique. The nanowires cores were grown with gold eutectic catalyser in vapour–liquid–solid growth mode. The double shell overgrowth, on the side facets of nanowires, was performed using lower substrate temperature (about 400 ◦C, and 230 ◦C,
