Spatial control of electron & hole states in InAs/GaSb heterostructures
Single nanowire transistors employing three separately controlled electrostatic gates were fabricated to investigate band gap modulation in InAs-GaSb heterostructures. The aim is to show hybridization between electron and hole states over the heterojunction. Electric and thermoelectric characterization at low temperatures suggests that transport can be tuned from electrons in InAs to holes GaSb an
