Transient dielectric functions of Ge, Si, and InP from femtosecond pump-probe ellipsometry
Transient dielectric functions with a 120 fs time resolution of Ge, Si, and InP were acquired from 1.7 to 3.5 eV with a femtosecond pump-probe rotating-compensator ellipsometer. The intensity of the pump laser (with 1.55, 3.10, or 4.65 eV photon energy) was adjusted to create an initial near-surface carrier density of 1020 cm-3. In Ge, there is a significant (∼15%) decrease in the E1 and E1 + Δ1 c
