Charge state readout and hyperfine interaction in a few-electron InGaAs double quantum dot
A laterally defined InGaAs double quantum dot with an integrated charge readout sensor is realized in an InGaAs/InP heterostructure. The charge states of the double quantum dot are measured with the use of the charge readout sensor in the few-electron regime in which the current is too weak to be observable by direct measurements of electron transport through the double dot. We also measure the le
