Low-temperature MOCVD growth of InN buffer layers with indium pre-deposition technology
Cubic-InN was grown at a low temperature of 350 degrees C using our home-made low-pressure metal-organic chemical vapor deposition (MOCVD). The technology of indium pre-deposition was applied, that is, a layer of indium was deposited on the sapphire surface with a precursor of trimethylindium (TMI) before the growth of InN. Both X-ray diffraction (XRD) and X-ray photoelectron (XPS) spectra show th