Radio-Frequency Characterization of Selectively Regrown InGaAs Lateral Nanowire MOSFETs
We demonstrate InGaAs multigate MOSFETs, so-called FinFETs. The lateral nanowires constituting the channel in these devices have been formed using selective area regrowth, where the surfaces of the nanowires are crystallographic planes. L-g = 32 nm devices exhibit peak transconductance of 1.8 mS/mu m at V-ds = 0.5 V. We also report on RF characterization of these devices. A small-signal hybrid-p m