Transmission Electron Microscopy of Semiconductor Nanowires
Semiconductor nanowires are studied by using transmission electron microscopy (TEM) based methods in this work. In the first section, the growth mechanism of gallium arsenide nanowires grown by chemical beam epitaxy is investigated. The nanowires are epitaxially grown from a gallium arsenide substrate by using gold seed particles as catalysts. The growth of gold particle catalysed nanowires is oft