Unimodal dome-shaped island population of Ge/Si (001) by step-wise growth in UHV-CVD
This work introduces a new approach to achieve a unimodal dome-shaped island population for the self-assembled Ge/Si (0 0 1) dots grown by ultra-high vacuum chemical vapour deposition at T = 620 degreesC. A step-wise growth mode is applied, consisting of two Ge deposition steps with a short growth interruption in between. In the first step, a "base structure" with pyramids and domes is grown while
