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Atomic layer deposition (ALD) has been an attractive tool in the fabrication of Pt thin layers and nanoparticles. In this work, the surface chemistry of Pt ALD through the MeCpPtMe3/N2-plasma (N2*) and the MeCpPtMe3/NH3-plasma (NH3*) processes at 300 °C have been investigated in detail using in vacuo X-ray photoelectron spectroscopy (XPS) during the ALD process, so that the evolution of surface sp
