Electronic, Transport, and Optical Properties of Broken-Gap Heterostructures
This thesis examines the physical properties of broken-gap heterostructures using a multiband k.p model and self-consistent calculations. Broken-gap heterostructures, made from InAs, GaSb, and AlSb, are characterized by a special band alignment with an overlap between the InAs conduction band and the GaSb valence band. The band overlap results in anticrossing regions in the energy dispersions and
