Interface composition of InAs nanowires with Al2O2 and HfO2 thin films
Abstract in UndeterminedVertical InAs nanowires (NWs) wrapped by a thin high-kappa dielectric layer may be a key to the next generation of high-speed metal-oxide-semiconductor devices. Here, we have investigated the structure and chemical composition of the interface between InAs NWs and 2 nm thick Al(2)O(3) and HfO(2) films. The native oxide on the NWs is significantly reduced upon high-kappa dep