Core-shell tfet developments and tfet limitations
Tunneling field-effect transistors (TFET) based on a vertical gate-All-Around (VGAA) nanowire (NW) architecture with a core-shell (CS) structure have been explored for future CMOS applications. Performance predictions based on a tight-binding mode-space NEGF technique include a drive current \mathrm{I}-{\mathrm{o}\mathrm{n}} of 6.7\ \mu \mathrm{A} (NW diameter \mathrm{d}= 10.2\ \mathrm{nm}) at \ma
